Datasheet > 2KJ7114DFN

2KJ7114DFN

更新时间： 2024-10-15 18:09:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	235K
描述
Dual P-MOSFETs

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中文翻译

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数据手册

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2KJ7114DFN 数据手册

SMD Type

MOSFET

Dual P-channel MOSFET

2KJ7114DFN

DFN2X2-6

■Features

● VDS (V) = -20V

● ID = -6.0A

● Low threshold voltage

● Very fast switching

● Trench MOSFET technology

1.S1

5.G2

6.D1

7.D1

8.D2

2.G1

3.D2

4.S2

■Absolute Maximum Ratings (T

= 25℃ Unless otherwise noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

-20

±8

Gate-Source Voltage

Continuous Drain Current, t ≤ 5 s

Pulsed Drain Current (tp≤10μs)

-6.0

IDM

-14.4

1210

515

Power Dissipation

in free air ^*2

244

in free air ^*1

Thermal Resistance, Junction- to-Ambient

RθJA

104

℃/W

in free air; t ≤ 5 s

Junction Temperature

150

℃

Junction Storage Temperature Range

Tstg

-55 to 150

*1. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².

*2. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

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