SMD Type
MOSFET
P-Channel MOSFET
2KJ7105DFN
PDFN3.3x3.3-8
Ƶ Features
Top View
Bottom View
ƽ VDS
-20V
ƽ I
D
(at VGS=-4.5V)
-40A
ƽ RDS(ON) (at VGS =-4.5V)
ƽ RDS(ON) (at VGS =-2.5V)
ƽ RDS(ON) (at VGS =-1.8V)
< 9.5mȍ
< 12.5mȍ
< 18mȍ
Pin 1
D
Top View
G
S
Ƶ Absolute Maximum Ratings
TA = 25ć unless otherwise noted.
Parameter
Symbol
Rating
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
GS
-20
±8
V
-40
-29
-100
-14.5
-11.5
-40
80
T
C
=25ć
I
D
Continuous Drain Current
TC
=100ć
Pulsed Drain Current C
I
DM
A
T
A
A
=25ć
=70ć
Continuous Drain Current
IDSM
T
Avalanche Current C
I
AS, IAR
Avalanche energy L=0.1mH C
E
AS, EAR
mJ
W
29
T
T
T
T
C
=25ć
B
P
D
Power Dissipation
12
C
=100ć
3.1
2
A
A
=25ć
=70ć
Power Dissipation A
P
DSM
A
40
t İ 10s
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
R
thJA
thJC
A D
ć/W
Steady-State
Steady-State
75
R
4.2
150
T
J
ć
Storage Temperature Range
Tstg
-55 to 150
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
=25°C. The Power dissipation PDSM is based on RșJA t İ 10s value and the maximum allowed junction temperature of
150°C. The value in any given application depends on the user's specific board design.
B. The power dissipation P is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in
TA
D
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and
duty cycles to keep initial TJ=25°C.
D. The RșJA is the sum of the thermal impedance from junction to case RșJC and case to ambient.
1
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