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2KJ7104DFN PDF预览

2KJ7104DFN

更新时间: 2024-11-18 18:09:47
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
5页 253K
描述
Dual P-MOSFETs

2KJ7104DFN 数据手册

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SMD Type  
MOSFET  
Dual P-channel MOSFET  
2KJ7104DFN  
DFN2X2-6  
Features  
VDS (V) = -20V  
8
ID = -6.0A  
7
Low threshold voltage  
Very fast switching  
Trench MOSFET technology  
2 kV ElectroStatic Discharge (ESD) protection  
1.S1  
5.G2  
6.D1  
7.D1  
8.D2  
2.G1  
3.D2  
4.S2  
D2  
D1  
G1  
G2  
S1  
S2  
Absolute Maximum Ratings (T  
A
= 25Unless otherwise noted)  
Parameter  
Symbol  
Rating  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
DS  
GS  
-20  
±8  
V
A
*1  
Continuous Drain Current, t 5 s  
Pulsed Drain Current (tp10μs)  
I
D
-6.0  
IDM  
-14.4  
1210  
515  
*1  
*2  
*3  
Power Dissipation  
P
D
mW  
V
Electrostatic Discharge Voltage  
V
ESD  
2000  
244  
in free air *2  
in free air *1  
Thermal Resistance, Junction- to-Ambient  
RθJA  
104  
/W  
*1  
64  
in free air; t 5 s  
Junction Temperature  
TJ  
150  
Junction Storage Temperature Range  
Tstg  
-55 to 150  
*1. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.  
*2. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.  
*3. HBM; C = 100 pF; R = 1.5 kΩ; Measured between all pins.  
1
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