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2KJ7008 PDF预览

2KJ7008

更新时间: 2024-11-18 18:09:59
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
4页 410K
描述
P-Channel MOSFET

2KJ7008 数据手册

 浏览型号2KJ7008的Datasheet PDF文件第2页浏览型号2KJ7008的Datasheet PDF文件第3页浏览型号2KJ7008的Datasheet PDF文件第4页 
SMD Type  
MOSFET  
P-channel MOSFET  
2KJ7008  
SOP-8  
Unit:mm  
Ƶ Features  
ƽ VDS = -40V  
ƽ ID  
= -13 A  
R
DS(on) < 15m@ VGS=-10V  
DS(on) < 18m@ VGS=-4.5V  
ƽ
ƽ
0.15  
1.50  
R
ƽ High density cell design for ultra low Rdson  
ƽ Fully characterized avalanche voltage and current  
ƽ Excellent package for good heat dissipation  
D
G
S
Ƶ Absolute Maximum Ratings (T  
A
= 25ć unless otherwise noted)  
Parameter  
Symbol  
Rating  
-40  
Unit  
V
Drain-Source Voltage  
V
V
DS  
GS  
Gate-Source Voltage  
±20  
Continuous Drain Current  
Pulsed Drain Current (Note 1)  
Maximum Power Dissipation  
I
D
-13  
A
I
DM  
-50  
P
D
2.5  
W
Thermal Resistance, Junction- to-Ambient (Note 2)  
Junction Temperature  
R
JA  
50  
ć/W  
T
J
150  
ć
Junction Storage Temperature Range  
Tstg  
-55 to 150  
Notes:  
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
2. Surface Mounted on FR4 Board, t İ 10 sec.  
1
www.kexin.com.cn  

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