Datasheet > 2KJ6069

2KJ6069

更新时间： 2024-11-18 18:09:19

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	462K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KJ6069 数据手册

DIP Type

MOSFET

P-Channel MOSFET

2KJ6069

TO-220

4.50

1.30

± 0.20

9.90

(8.70)

ø3.60 0.10

0.20

+0.10

–0.05

■ Features

● V^DS(V) =-60V

● ID =-80 A

● R^DS(ON)< 19.5mΩ @ V^GS= -10V

● RDS(ON) < 21.5mΩ @ VGS = -4.5V

1.27

0.10

1.52

0.80

0.10

+0.10

–0.05

0.50

2.40

± 0.20

2.54TYP

[2.54 0.20 ]

2.54TYP

[2.54 0.20 ]

1 GATE

2 DRAIN

3 SOURCE

10.00

± 0.20

■ Absolute Maximum Ratings (Ta = 25°C, unless otherwise noted)

Parameter

Symbol

V^DS

V^GS

I^D

Rating

-60

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

-80

Continuous Drain Current ^*1

Pulsed Drain Current ^*2

I^DM

-200

196

Single Pulse Avalanche Energy ^*3

Power Dissipation ^*1

E^AS

P^D

Thermal Resistance, Junction- to-Ambient ^*4

Thermal Resistance, Junction- to-Case ^*1

Junction Temperature

RθJA

R^θJC

T^J

100

1.66

150

℃/W

℃

Junction Storage Temperature Range

T^stg

-55 to 150

Notes: 1. TC=25℃ Limited only by maximum temperature allowed.

2. PW≤10μs, Duty cycle≤1%.

3. EAS condition: V^DD=-15V,V^GS=-10V, L=0.5mH, R^g=25Ω Starting T^J= 25°℃.

4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air

environment with Ta=25℃.

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