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2KJ6063DFN PDF预览

2KJ6063DFN

更新时间: 2024-11-18 18:09:15
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
5页 278K
描述
Dual P-MOSFETs

2KJ6063DFN 数据手册

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SMD Type  
MSFET  
Dual P-Channel MOSFET  
2KJ6063DFN  
PDFN3.3x3.3-8A  
Top View  
Bottom View  
Features  
VDS  
-30 V  
-29 A  
ID (at VGS=-10V)  
RDS(ON) (at VGS = - 10V) < 20 mΩ  
RDS(ON) (at VGS = - 4.5V) < 29 mΩ  
Top View  
1
2
3
4
8
S1  
G1  
S2  
D1  
7
6
5
D1  
D2  
D2  
Absolute Maximum Ratings (  
TA = 25unless otherwise noted.)  
Parameter  
Symbol  
Rating  
-30  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
V
DS  
GS  
±20  
-29  
T
C
=25℃  
Continuous Drain Current (Note
ID  
TC  
=100℃  
-18  
A
Pulsed Drain Current (Note 2)  
Avalanche Current  
I
DM  
AR  
AR  
-80  
I
24  
Repetitive avalanche energy L=0.1mH  
E
29  
mJ  
W
TC  
=25℃  
=100℃  
=25℃  
25  
P
D
Power Dissipation (Note 1)  
TC  
10  
TA  
4.1  
Thermal Resistance, Junction- to-Lead (Note 1)  
R
θJC  
θJA  
5
/W  
Thermal Resistance, Junction- to-Ambient (Note 1)  
Junction Temperature  
R
30  
T
J
150  
-55 to 150  
Storage Temperature Range  
Notes:  
T
stg  
1. Surface mounted on 1.5" x 1.5" FR4 board using 1 sq in pad, 2 oz Cu.  
2. Pulse width limited by maximum junction temperature.  
1
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