Datasheet > 2KJ6062DFN

2KJ6062DFN

更新时间： 2024-11-18 18:09:27

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	270K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KJ6062DFN 数据手册

SMD Type

MOSFET

P-Channel MOSFET

2KJ6062DFN

PDFN3.3x3.3-8

Top View

Bottom View

■ Features

● VDS

-40 V

● ID

(at VGS=-10V)

-30 A

● RDS(ON) (at VGS = - 10V)

● RDS(ON) (at VGS = - 4.5V)

● Advanced Trench Technology

< 12.5 mΩ

< 17 mΩ

Pin 1

● Excellent RDS(ON) and Low Gate Charge

Top View

■ Absolute Maximum Ratings (

= 25℃ unless otherwise noted.)

Symbol

Parameter

Rating

-40

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

=25℃

-30

Continuous Drain Current

=100℃

-19

Pulsed Drain Current (Note 1)

IDM

-92

Single Pulsed Avalanche Energy (Note2)

132

=25℃

=70℃

6.25

Power Dissipation

Thermal Resistance, Junction- to-Ambient (Note 3)

Junction Temperature

θJA

℃/W

℃

150

Storage Temperature Range

Notes:

Tstg

-55 to 150

1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2. EAS condition: T = 25℃, VDD= -20V, V = -10V, L= 0.5mH, R = 25Ω, IAS= -23A

3. The value of R^θJA is measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment, t ≤ 10s.

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