Datasheet > 2KJ6061

2KJ6061

更新时间： 2024-11-18 18:09:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	395K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KJ6061 数据手册

SMD Type

MOSFET

P-Channel MOSFET

2KJ6061

TO-252

■ Features

● VDS (V) = -40V

● ID = -15A

● RDS(ON) < 33.5mΩ @ VGS = -10V

● RDS(ON) < 43mΩ @ VGS = -4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

1. Gate (G)

2. Drain (D)

3. Source (S)

■ Absolute Maximum Ratings (T

= 25℃ Unless otherwise noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

-40

±20

-15

(TC

= 100℃)

-9.5

-20

Single pulse avalanche energy

Power Dissipation

(Note 1)

(Note 2)

136

66.5

1.88

150

Thermal Resistance, Junction- to-Case

Junction Temperature

RᶿJC

℃/W

℃

Junction Storage Temperature Range

Notes:

Tstg

-55 to 150

1. EAS condition: T

=25℃,VDD=-20V,V

G=-10V,L=1mH,Rg=25Ω,IAS=16.5A

≤ 10sec.

2. Surface Mounted on FR4 Board, t

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12 3 4 5

中文翻译

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