Datasheet > 2KJ6059DFN

2KJ6059DFN

更新时间： 2024-11-18 18:09:59

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	467K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KJ6059DFN 数据手册

SMD Type

MOSFET

P-Channel MOSFET

2KJ6059DFN

PDFN5x6-8

■ Features

● VDS

-40 V

-35 A

● ID (at VGS=-10V)

● RDS(ON) (at VGS = - 10V)

● RDS(ON) (at VGS = - 4.5V)

● Advanced Trench Technology

< 12.5 mΩ

< 18.5 mΩ

● Excellent RDS(ON) and Low Gate Charge

■ Absolute Maximum Ratings (

TC = 25℃ unless otherwise noted.)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

-40

±20

=25℃

-35

Continuous Drain Current

=100℃

-23

Pulsed Drain Current (Note 1)

Single Pulsed Avalanche Energy (Note2)

Power Dissipation

-140

132

Thermal Resistance, Junction- to-Case

Junction Temperature

θJC

4.8

℃/W

150

℃

Storage Temperature Range

Notes:

Tstg

-55 to 150

1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2. EAS condition: T = 25℃, VDD= -20V, V = -10V, L= 0.5mH, R = 25Ω, IAS= -23A

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