Datasheet > 2KJ6058

2KJ6058

更新时间： 2024-11-20 18:09:27

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	239K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KJ6058 数据手册

SMD Type

MOSFET

P-Channel MOSFET

2KJ6058

■Features

● VDS (V) = -20V

● ID = -105A

● RDS(ON) < 4mΩ @ VGS=-4.5V

● Low RDS(on) to Minimize Conduction Losses.

● Ohmic Region Good RDS(on) Ratio.

● Optimized Gate Charge to Minimize Switching Losses.

■Absolute Maximum Ratings (T

= 25℃ Unless otherwise noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

-20

±12

=25℃

=100℃

=25℃

=70℃

-105

-100

-42

Continuous Drain Current (Note 1)

-33.5

-300

-54

Pulsed Drain Current (Note 2)

Avalanche Current

Avalanche Energy

L = 0.1mH

150

=25℃

=100℃

=25℃

=70℃

119

47.5

8.3

Power Dissipation (Note 3)

5.3

t ≦10s

Thermal Resistance, Junction- to-Ambient (Note 4)

ᶿJA

ᶿJC

℃/W

Steady-State

Thermal Resistance, Junction- to-Case

Junction Temperature

1.05

150

℃

Junction Storage Temperature Range

Notes

Tstg

-55 to 150

1.The maximum current rating is package limited.

2. Pulse width limited by maximum junction temperature.

3. The Power dissipation is based on RᶿJA t ≦10s value.

4. The value of RθJA is measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T =25° C. The value in any given application depends on the user's specific board design.

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