Datasheet > 2KJ6056

2KJ6056

更新时间： 2024-10-15 18:09:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	539K
描述
P-Channel MOSFET

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数据手册

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2KJ6056 数据手册

SMD Type

MOSFET

P-Channel MOSFET

2KJ6056

TO-252

Features

Advanced Process Technology

Surface Mount

175 Operating Temperature

Fast Switching

P-Channel

Fully Avalanche Rated

1. Gate (G)

2. Drain (D)

3. Source (S)

■ Absolute Maximum Ratings (T

= 25℃ Unless otherwise noted)

Symbol

Parameter

Drain-Source Voltage

Rating

-150

±20

Unit

Gate-Source Voltage

= 25℃)

-21

Continuous Drain Current

(TC

= 100℃)

-14.9

-84

Pulsed Drain Current

310

Single pulse avalanche energy

Power Dissipation

110

ᶿJA

ᶿJC

Thermal Resistance, Junction- to-Ambient

Thermal Resistance, Junction- to-Case

Junction Temperature

℃/W

1.4

175

℃

Junction Storage Temperature Range

Notes:

Tstg

-55 to 175

*1.limited by maximum junction temperature.

*2. EAS condition: starting T = 25°C, L = 14mH, R

*3. Surface Mounted on FR4 Board, t ≤ 10 sec.

G = 25Ω, IAS = -6.6A.

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