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2KJ6055DFN PDF预览

2KJ6055DFN

更新时间: 2024-11-18 18:09:35
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
5页 325K
描述
P-Channel MOSFET

2KJ6055DFN 数据手册

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SMD Type  
MOSFET  
P-Channel MOSFET  
2KJ6055DFN  
PDFN3.3x3.3-8  
Top View  
Bottom View  
Features  
VDS  
-30 V  
-34 A  
ID (at VGS=-10V)  
RDS(ON) (at VGS = - 10V) < 7.8 mΩ  
RDS(ON) (at VGS = - 4.5V) < 12.3 mΩ  
Pin 1  
D
Top View  
1
2
3
4
8
7
6
5
G
S
Absolute Maximum Ratings (  
TA = 25unless otherwise noted.)  
Parameter  
Symbol  
Rating  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
V
DS  
GS  
-30  
±20  
-34  
T
C
=25℃  
Continuous Drain Current (Note 1)  
ID  
TC  
=100℃  
-32.5  
-136  
76  
A
Pulsed Drain Current (Note 2)  
Avalanche Energy L=0.1mH  
IDM  
E
AS  
mJ  
W
TC  
=25℃  
=100℃  
=25℃  
30  
Power Dissipation (Note 1)  
TC  
P
D
12  
TA  
5
Thermal Resistance, Junction- to-Lead (Note 1)  
R
θJC  
θJA  
4.2  
/W  
Thermal Resistance, Junction- to-Ambient (Note 1)  
Junction Temperature  
R
25  
T
J
150  
-55 to 150  
Storage Temperature Range  
Notes:  
T
stg  
1. Surface mounted on 1.5" x 1.5" FR4 board using 1 sq in pad, 2 oz Cu.  
2. Pulse width limited by maximum junction temperature.  
1
www.kexin.com.cn  

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