Datasheet > 2KJ6051

2KJ6051

更新时间： 2024-06-27 12:12:31

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	378K
描述
Dual P-MOSFETs

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中文翻译

获取价格

数据手册

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2KJ6051 数据手册

SMD Type

MOSFET

Dual P-channel MOSFET

2KJ6051

■ Features

● BVDSS = -20 V

● ID = -0.9 A @ VGS = -4.5 V

● RDS(ON) < 520 mΩ@ VGS = -4.5 V

● RDS(ON) < 700 mΩ@ VGS = -2.5 V

● RDS(ON) < 950 mΩ@ VGS = -1.8 V

● ESD Protected Gate

S₂

D₁

G₂

1 S1 4 S2

2 G1 5 G2

3 D2 6 D1

S₁

D₂

G₁

Top View

Internal Schematic

■ Absolute Maximum Ratings (T

= 25℃ unless otherwise stated)

Parameter

Drain-Source Voltage

Symbol

Rating

-20

Unit

Gate-Source Voltage

±8

=25℃

=70℃

-0.6

Continuous Drain Current (Note 1)

Pulsed Drain Current (Note 2)

-0.48

-3

Thermal Resistance, Junction- to-Ambient (Note 1)

Thermal Resistance, Junction- to-Lead (Note 3)

θJA

θJL

460

℃/W

350

=25℃

=70℃

0.3

Power Dissipation (Note 1)

0.19

150

Junction Temperature

Storage Temperature Range

Notes:

℃

stg

-55 to 150

1. The value of RθJA is measured with the device mounted on 1in ²FR-4 board with 2oz. Copper, in a still air environment

with T =25°C. The value in any given application depends on the user's specific board design. The current rating is

based on the t ≤ 10s thermal resistance rating.

2. Repetitive rating, pulse width limited by junction temperature.

3. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

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