Datasheet > 2KJ6031

2KJ6031

更新时间： 2024-10-15 18:09:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	286K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KJ6031 数据手册

SMD Type

MOSFET

P-Channel MOSFET

2KJ6031

Unit:mm

SOT-223

Ƶ Features

6.50±0.2

3.00±0.1

ƽ VDS (V) = -100V

ƽ ID = -3.0A

ƽ RDS(ON) <200mಳ @ VGS=-10V (Typ:170mಳ)

ƽ RDS(ON) <230mಳ @ VGS=-4.5V (Typ:200mಳ)

ƽ Super high dense cell design

ƽ Advanced trench process technology

ƽ Reliable and rugged

0.250

2.30 (typ)

0.84 (max)

0.66 (min)

Gauge Plane

ƽ High density cell design for ultra low on-resistance

1.Gate

2.Drain

3.Source

4.Drain

4.60 (typ)

Ƶ Absolute Maximum Ratings (TC = 25ć Unless othe

ise noted)

Parameter

Symbol

Rating

-100

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

-3

Continuous Drain Current (T

Pulsed Drain Current

Power Dissipation

C=100ć)

-2.1

-20

3.1

Thermal Resistance, Junction- to-Ambient

Junction Temperature

ೃJA

ć/W

150

Junction Storage Temperature Range

Tstg

-55 to 150

Note 1. Surface Mounted on FR4 Board, t İ 10 sec.

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