Datasheet > 2KJ6029

2KJ6029

更新时间： 2024-11-19 18:09:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	546K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KJ6029 数据手册

SMD Type

MOSFET

P-Channel MOSFET

2KJ6029

TO-252

■ Features

● VDS (V) = -100V

● ID = -18A

● RDS(ON) < 100mΩ @ VGS = -10V (Typ.:85mΩ)

● RDS(ON) < 120mΩ @ VGS = -4.5V (Typ.:95mΩ)

● Super high dense cell design

● Advanced trench process technology

● Reliable and rugged

● High density cell design for ultra low On-Resistance

1. Gate (G)

2. Drain (D)

3. Source (S)

■ Absolute Maximum Ratings (T

= 25℃ Unless otherwise noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

-100

±20

-18

-100

Thermal Resistance, Junction- to-Case

Junction Temperature

(Note 1)

ᶿJC

1.79

℃/W

175

℃

Storage Temperature Range

Tstg

-55 to 175

Note 1. Surface Mounted on FR4 Board, t ≤ 10 sec.

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