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2KJ6028 PDF预览

2KJ6028

更新时间: 2024-11-19 18:09:03
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
7页 337K
描述
P-Channel MOSFET

2KJ6028 数据手册

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SMD Type  
MSFET  
P-Channel MOSFET  
2KJ6028  
TO-252  
2
Features  
VDS (V) = -30V  
ID = -50A  
RDS(ON) < 11mΩ @ VGS = -10V  
100% Avalanche tested  
1
3
1. Gate (G)  
2. Drain (D)  
3. Source (S)  
Absolute Maximum Ratings (T  
j
= 25ess otherwinoted)  
Symbol  
Parameter  
Drain-Source Voltage  
Rating  
-30  
Unit  
V
V
V
DS  
GS  
Gate-Source Voltage  
±20  
= 25℃  
-50  
Continuous Drain Current  
ID  
TC  
= 100℃  
-42  
A
Pulsed Drain Current  
I
DM  
AS  
AS  
-200  
100  
Single Pulse Avalanche Energy  
Single Pulse Avalanche Current  
Power Dissipation  
Note 1  
E
mJ  
A
I
-50  
T
C
= 25℃  
P
D
58  
W
Thermal Resistance, Junction- to-Ambient Note 2  
R
ᶿJA  
ᶿJC  
40  
/W  
Thermal Resistance, Junction- to-Case  
Junction Temperature  
Note 2  
R
2.6  
T
J
175  
Storage Temperature Range  
Notes:  
Tstg  
-55 to 175  
1. EAS condition: ID=25A  
10sec.  
2. Surface Mounted on FR4 Board, t  
1
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