Datasheet > 2KJ6026

2KJ6026

更新时间： 2024-11-21 18:10:07

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	179K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KJ6026 数据手册

SMD Type

MOSFET

Dual P-channel MOSFET

2KJ6026

Ƶ Features

(

)

Unit : mm

SOT-23-6

+0.1

-0.1

0.4

ƽ VDS (V) = -20V

ƽ ID = -4.0A

ƽ Low threshold voltage

ƽ Very fast switching

ƽ Trench MOSFET technology

+0.02

-0.02

0.15

+0.01

-0.01

+0.2

-0.1

4 Drain2

5 Source1

6 Drain1

1 Gate1

2 Source2

3 Gate2

Ƶ Absolute Maximum Ratings (T

= 25ć Unless otherwise noted)

Parameter

Symbol

Rating

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

±10

-4.0

-12

Continuous Drain Current, t İ 5 s

Pulsed Drain Current (tpİ10ȝs)

IDM

1210

515

244

104

Power Dissipation

in free air ^*2

in free air ^*1

Thermal Resistance, Junction- to-Ambient

RೃJA

ć/W

in free air; t İ 5 s

Junction Temperature

150

Junction Storage Temperature Range

Tstg

-55 to 150

*1. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².

*2. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

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