Datasheet > 2KJ6024

2KJ6024

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	454K
描述
P-Channel MOSFET

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中文翻译

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数据手册

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2KJ6024 数据手册

SMD Type

MOSFET

P-Channel MOSFET

2KJ6024

TO-252

■ Features

● VDS (V) = -40V

● ID = -40A

● RDS(ON) < 14mΩ @ VGS = -10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

1. Gate (G)

2. Drain (D)

3. Source (S)

■ Absolute Maximum Ratings (T

= 25℃ Unless otherwise noted)

Parameter

Symbol

Rating

-40

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

±20

-40

(TC

= 100℃)

-25

IDM

-50

Single pulse avalanche energy

Power Dissipation

(Note 1)

(Note 2)

544

Thermal Resistance, Junction- to-Case

Junction Temperature

RᶿJC

1.88

175

℃/W

℃

Junction Storage Temperature Range

Notes:

Tstg

-55 to 175

1. EAS condition: T

=25℃,VDD=-20V,V

G=-10V,L=1mH,Rg=25Ω,IAS=33A

10sec.

≤

2. Surface Mounted on FR4 Board, t

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12 3 4 5

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