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2KJ6015 PDF预览

2KJ6015

更新时间: 2024-11-19 18:09:35
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
4页 359K
描述
P-Channel MOSFET

2KJ6015 数据手册

 浏览型号2KJ6015的Datasheet PDF文件第2页浏览型号2KJ6015的Datasheet PDF文件第3页浏览型号2KJ6015的Datasheet PDF文件第4页 
SMD Type  
MOSFET
P-Channel Enhancement MOSFET  
2KJ6015  
(
)
Unit: mm  
SOT-23-6  
+0.1  
-0.1  
0.4  
Features  
VDS (V) = -30V  
ID = -4.1 A  
4
5
6
RDS(ON)  
RDS(ON)  
52m (VGS = -10V)  
87m (VGS = -4.5V)  
D
S
2
3
1
+0.02  
0.15  
-0.02  
+0.01  
-0.01  
+0.2  
-0.1  
G
1.Drain  
2.Drain  
3.Gate  
4.Source  
5.Drain  
6.Drain  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
-30  
Unit  
V
V
DS  
GS  
Gate-Source Voltage  
V
f20  
-4.1  
-3.5  
-20  
Continuous Drain Current  
Ta = 25ć  
Ta = 70ć  
ID  
A
W
Pulsed Drain Current  
Power Dissipation  
IDM  
1.4  
Ta = 25ć  
Ta = 70ć  
P
D
1
90  
Thermal Resistance.Junction- to-Ambient  
t İ10s  
RthJA  
ć/W  
ć
Steady State  
125  
Thermal Resistance.Junction- to-Lead  
Junction Temperature  
R
thJL  
60  
T
J
150  
Storage Temperature Range  
T
stg  
-55 to 150  
1
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