Datasheet > 2KJ6013DFN

2KJ6013DFN

更新时间： 2024-11-19 18:09:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	1555K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KJ6013DFN 数据手册

SMD Type

MOSFET

P-Channel MOSFET

2KJ6013DFN

DFN2X2-6L

■ Features

● VDS (V) = -12V, ID = -15A

● RDS(ON) <15mΩ @ VGS=-4.5V

● RDS(ON) <22mΩ @ VGS=-2.5V

● RDS(ON) <45mΩ @ VGS=-1.8V

● RDS(ON) <80mΩ @ VGS=-1.5V

DFN2X2-6L bottom view

Bottom Drain Contact

■ Absolute Maximum Ratings (T

= 25℃ Unless otherwise noted)

Parameter

Symbol

Rating

-12

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (Note 1)

Power Dissipation

±12

-15

-65

Thermal Resistance, Junction- to-Ambient (Note 2)

Thermal Resistance, Junction- to-Case (Note 2)

Operating Junction and Storage Temperature Range

ᶿJA

ᶿJC

℃/W

℃

6.9

, Tstg

-55 to 150

■ Electrical Characteristics (

= 25℃ Unless otherwise noted)

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

Gate Threshold Voltage

Symbol

Test Conditions

Min

-12

Typ

Max

Unit

DSS

GSS

GS(th)

=-250μA, VGS=0V

DS=-12V, VGS=0V

DS=0V, VGS=±8V

-1

±100

-1.0

μA

DS=VGS ,

GS=-4.5V, I

GS=-2.5V, I

GS=-1.8V, I

GS=-1.5V, I

=-250μA

-0.4

-0.7

=-7A

=-6A

=-2.5A

=-1A

Static Drain-Source On-Resistance (Note 3)

Body-Diode Continuous Current (Note 2)

RDS(O

mΩ

-15

-1.2

Diode Forward Voltage (Note 3)

Notes:

ISD=-8 A,VGS=0V

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

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