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2KJ6010 PDF预览

2KJ6010

更新时间: 2024-11-19 18:09:47
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
4页 117K
描述
P-Channel MOSFET

2KJ6010 数据手册

 浏览型号2KJ6010的Datasheet PDF文件第2页浏览型号2KJ6010的Datasheet PDF文件第3页浏览型号2KJ6010的Datasheet PDF文件第4页 
SMD Type  
MOSFET  
P-Channel Enhancement Mode  
Field Effect Transistor  
2KJ6010  
627ꢅꢆꢉ  
8QLWꢌ PP  
ꢃꢀꢁꢄ  
ꢅꢀꢁꢄ  
ꢆꢁꢇ  
ꢀꢁꢂ  
ꢃꢀꢁꢄ  
ꢅꢀꢁꢄ  
Features  
3
VDS (V) = -30V  
ID = -2.6 A (VGS = -10V)  
RDS(ON) < 130m (VGS = -10V)  
RDS(ON) < 200m (VGS = -4.5V)  
1
2
ꢃꢀꢁꢄ  
ꢃꢀꢁꢀꢈ  
ꢅꢀꢁꢀꢄ  
ꢀꢁꢇꢈ  
ꢅꢀꢁꢄ  
ꢀꢁꢄ  
ꢃꢀꢁꢄ  
ꢅꢀꢁꢄ  
ꢄꢁꢇ  
1. Gate  
2. Source  
3. Drain  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Rating  
-30  
Unit  
V
Gate-Source Voltage  
VGS  
V
20  
-2.6  
-2.2  
-20  
Continuous Drain Current  
TA=25  
TA=70  
ID  
A
Pulsed Drain Current  
Power Dissipation  
IDM  
PD  
1.4  
TA=25  
TA=70  
W
1
Themal Resistance. Junction-to-Ambient  
Themal Resistance. Junction-to-Case  
Junction and Storage Temperature Range  
RthJA  
RthJC  
125  
/W  
/W  
80  
TJ, TSTG  
-55 to 150  
1
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