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2KJ6008EDS PDF预览

2KJ6008EDS

更新时间: 2024-11-19 18:09:31
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
4页 222K
描述
P-Channel MOSFET

2KJ6008EDS 数据手册

 浏览型号2KJ6008EDS的Datasheet PDF文件第2页浏览型号2KJ6008EDS的Datasheet PDF文件第3页浏览型号2KJ6008EDS的Datasheet PDF文件第4页 
SMD Type  
MOSFET  
P-Channel MOSFET  
ꢀꢀꢀꢀꢀꢀꢁ,+ꢂꢃꢃꢄ&%4  
627ꢅꢆꢋꢅꢋ  
8QLWꢊ PP  
ꢃꢀꢁꢆ  
ꢅꢀꢁꢄ  
ꢆꢁꢇ  
ꢀꢁꢂ  
ꢃꢀꢁꢄ  
ꢅꢀꢁꢄ  
3
Ƶ Features  
ƽ VDS (V) =-20V  
ƽ ID =-4A (VGS =-4.5V)  
1
2
ƽ RDS(ON) ˘ 45m¡ (VGS =-4.5V)  
ƽ RDS(ON) ˘ 54m¡ (VGS =-2.5V)  
ƽ RDS(ON) ˘ 75m¡ (VGS =-1.8V)  
ƽ ESD Rating: 3000V HBM  
ꢃꢀꢁꢀꢆ  
ꢅꢀꢁꢀꢆ  
ꢃꢀꢁꢄ  
ꢅꢀꢁꢄ  
ꢀꢁꢄꢈ  
ꢀꢁꢇꢈ  
D
ꢃꢀꢁꢄ  
ꢅꢀꢁꢆ  
ꢄꢁꢇ  
G
1. Gate  
2. Source  
3. Drain  
S
Ƶ Absolute Maximum Ratings Ta = 25ć  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
-20  
f8  
-4  
Unit  
V
DS  
GS  
V
Gate-Source Voltage  
V
Continuous Drain Current  
Ta = 25ć  
I
D
A
-3.5  
-30  
1.5  
1
Ta = 70ć  
Pulsed Drain Current  
Power Dissipation  
(Note.1)  
IDM  
Ta = 25ć  
Ta = 70ć  
P
D
W
80  
Thermal Resistance.Junction- to-Ambient tİ 10s  
Steady-State  
R
thJA  
thJL  
100  
52  
ć/W  
ć
Thermal Resistance.Junction- to-Lead  
Junction Temperature  
R
T
J
150  
Junction Storage Temperature Range  
T
stg  
-55 to 150  
Note.1: The power dissipation PD is based on TJ(MAX)=150°C, using İ 10s junction-to-ambient thermal resistance.  
1
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