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2KJ6007 PDF预览

2KJ6007

更新时间: 2024-11-22 18:09:31
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
5页 233K
描述
P-Channel MOSFET

2KJ6007 数据手册

 浏览型号2KJ6007的Datasheet PDF文件第2页浏览型号2KJ6007的Datasheet PDF文件第3页浏览型号2KJ6007的Datasheet PDF文件第4页浏览型号2KJ6007的Datasheet PDF文件第5页 
SMD Type  
MOSFET  
P-Channel Enhancement MOSFET  
2KJ6007  
627ꢅꢆꢋꢅꢋ  
8QLWꢊ PP  
ꢃꢀꢁꢆ  
ꢅꢀꢁꢄ  
ꢆꢁꢇ  
ꢃꢀꢁꢄ  
ꢅꢀꢁꢄ  
ꢀꢁꢂ  
Ƶ Features  
3
ƽ VDS (V) =-20V  
ƽ Low ON-resitance:  
RD S (O N ) =88.4mȍ (VGS =-1.5V)  
1
2
RD S (O N ) = 56mȍ (VGS =-1.8V)  
RD S (O N ) =39.7mȍ (VGS =-2.5V)  
RD S (O N ) = 29.8mȍ VGS = -4.5 V)  
ꢃꢀꢁꢀꢆ  
ꢅꢀꢁꢀꢆ  
ꢃꢀꢁꢄ  
ꢅꢀꢁꢄ  
ꢀꢁꢄꢈ  
ꢀꢁꢇꢈ  
ꢃꢀꢁꢄ  
ꢅꢀꢁꢆ  
ꢄꢁꢇ  
ꢀꢁ Gate  
ꢂꢁ Source  
ꢃꢁ  
Drain  
Ƶ Absolute Maximum Ratings Ta = 25ć  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
VGS  
ID  
Rating  
-20  
Unit  
V
Gate-Source Voltage  
fꢀ  
-6.0  
-24  
1
Continuous Drain Current  
Pulsed Drain Current  
Power Dissipation  
*1  
*2  
*3  
A
IDM  
PD  
W
ć
Power Dissipation t=10s  
Junction Temperature  
2
TJ  
150  
Junction and Storage TemperatureRange  
Tst g  
-55 to 150  
*1 The channel temperature should not exceed 150°C during use.  
*2 PW ̰ 10ȝs,Duty ̰ 1ˁ  
*3 Mounted on a FR4 board.  
1
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