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2KG037075PJL PDF预览

2KG037075PJL

更新时间: 2024-11-07 06:25:23
品牌 Logo 应用领域
士兰微 - SILAN 二极管开关
页数 文件大小 规格书
1页 77K
描述
COMMON ANODE DOUBLE DICE SWITCHING DIODE CHIPS

2KG037075PJL 数据手册

  
2KG037075PJL  
2KG037075PJL COMMON ANODE DOUBLE DICE SWITCHING DIODE CHIPS  
DESCRIPTION  
Ø
Ø
Ø
Ø
Ø
2KG037075PJL is a common anode doudbiclee• switching  
diode fabricated in planar technology.  
The parameters of diode match wdueell to double dice on  
the same chip substrate.  
Optimeidz graph design suit for encapsulation bonding, and  
the interference is very small between two dice.  
The top electrodes material is Al, and the back•side  
electrodes material is Au.  
Chip size: 0.37 X 0.37 (m2m. )  
2KG037075PJL CHIP TOPOGRAPHY  
2KG037075PJL ELECTRICAL CHARACTERISTICS (TJ=25°C)  
Characteristics Symbol Test Conditions  
Forward Voltage  
Min.  
••  
Typ. Max. Unit  
I =10mA.  
••  
1.0  
1.2  
••  
V
V
V
F
V
F
I =100mA.  
F
0.62  
100  
0.9  
120  
Reverse Voltage  
Reverse Current  
Diode Capacitance  
V
I =100mA.  
B
BR  
V =20V.  
R
••  
••  
••  
••  
••  
25  
5
nA  
mA  
pF  
I
R
V =75V.  
R
C
f=1MHz; V =0.  
1.9  
4
d
R
When switched from I =10mA to  
F
Reverse Recovery Time  
t
••  
••  
4
ns  
rr  
V =6V; R =100W; measured at  
R L  
I =1mA.  
R
Note˖The electrical characteristic is single dice value.  
HANGZHOU SILAN MICROELECTRONICS CO.,LTD  
Http: www.silan.com.cn  
REV:1.0  
2007.04.20  
Page 1 of 1  

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