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2KG037075NJL PDF预览

2KG037075NJL

更新时间: 2024-11-07 06:25:23
品牌 Logo 应用领域
士兰微 - SILAN 二极管开关
页数 文件大小 规格书
1页 77K
描述
COMMON CATHODE DOUBLE DICE SWITCHING DIODE CHIPS

2KG037075NJL 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.76二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 V最大重复峰值反向电压:100 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YESBase Number Matches:1

2KG037075NJL 数据手册

  
2KG037075NJL  
2KG037075NJL COMMON CATHODE DOUBLE DICE SWITCHING DIODE CHIPS  
DESCRIPTION  
Ø
Ø
Ø
Ø
Ø
2KG037075NJL is a common cathodeouble dice switching  
diode fabricated in planar technology.  
The parameters of diode match wdueell to double dice on  
the same chip substrate.  
Oimptized graph design suit for encapsulation bonding, and  
the interference is very small between two dice.  
The top electrodes material is Al, and the back•side  
electrodes material is Au.  
Chip size: 0.37 X 0.37 (m2m. )  
2KG037075NJL CHIP TOPOGRAPHY  
2KG037075NJL ELECTRICAL CHARACTERISTICS (TJ=25°C)  
Characteristics Symbol Test Conditions  
Forward Voltage  
Min.  
••  
Typ. Max. Unit  
I =10mA.  
••  
1.0  
1.2  
••  
V
V
V
F
V
F
I =100mA.  
F
0.62  
100  
0.9  
120  
Reverse Voltage  
Reverse Current  
Diode Capacitance  
V
I =100mA.  
B
BR  
V =20V.  
R
••  
••  
••  
••  
••  
25  
5
nA  
mA  
pF  
I
R
V =75V.  
R
C
f=1MHz; V =0.  
1.9  
4
d
R
When switched from I =10mA to  
F
Reverse Recovery Time  
t
V =6V; R =100W; measured at  
••  
••  
4
ns  
rr  
R
L
I =1mA.  
R
Note˖The electrical characteristic is single dice value.  
HANGZHOU SILAN MICROELECTRONICS CO.,LTD  
Http: www.silan.com.cn  
REV:1.0  
2007.04.20  
Page 1 of 1  

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