Datasheet > 2KG034350JL

2KG034350JL

更新时间： 2024-09-17 06:24:03

品牌	Logo	应用领域
士兰微 - SILAN		二极管开关
页数	文件大小	规格书
1页	51K
描述
SWITCHING DIODE CHIPS

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2KG034350JL 数据手册

2KG034350JL

2KG034350JL SWITCHING DIODE CHIPS

DESCRIPTION

Ø 2KG034350JL is a high speed switching diode chipfabricated

in planar technology.

Ø High reverse breakdown voltage rating.

Ø This chip can be encapsulated as MBD3004 switching diode.

Ø This chip has several thicknesses, can suit for different plastic

package. The top electrodes material is Al, and the back•side

electrodes material is Au.

2KG034350JL CHIP TOPOGRAPHY

La: Chip Size: 340mm;

Ø Chip size: 0.34 X 0.34 (mm²);

Ø Chip Thickness: 155±20mm or 180±20mm;

Lb: Pad Size: 180mm;

MAXIMUM RATINGS (Ta=25°C)

Characteristics

Repetitive Peak Reverse Voltage

DC Blocking Voltage

Symbol

Value

350

Unit

RRM

300

Forward Continuous Current

225

Peak Forward Surge Current@1.0ms

Maximum Operation Junction Temperature

Storage Temperature Range

4.0

FSM

150

°C

•65~+150

STG

ELECTRICAL CHARACTERISTICS (Ta=25°C)

Characteristics

Symbol

Test Conditions

I =20mA.

Min.

Typ.

Max.

Unit

••

0.87

Forward Voltage

I =100mA.

••

1.0

1.25

••

I =200mA.

Reverse Voltage

Reverse Current

Total Capacitance

I =100mA.

350

••

V =240V.

100

5.0

f=1MHz; V =0.

••

IF=IR=30mA, R =100W;

Reverse Recovery Time

rr+

••

measured at I =3mA.

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

REV:1.0

2008.01.29

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