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2KG028075YQ PDF预览

2KG028075YQ

更新时间: 2024-11-18 07:28:07
品牌 Logo 应用领域
士兰微 - SILAN 二极管开关
页数 文件大小 规格书
1页 39K
描述
SWITCHING DIODE CHIPS

2KG028075YQ 数据手册

  
2KG028075YQ  
2KG028075YQ SWITCHING DIODE CHIPS  
DESCRIPTION  
Ø
2KG028075YQ is a high speed switching diode chip  
fabricated in planar technology.  
Ø
Ø
This chip can be encapsulated as 1N4148 switching diode.  
When the chip is selected glass package, the chip thickness  
is 120mm, and the top electrodes material is Ag bum, pthe  
back•side electrodes material is Ag.  
2
Ø
Chip size: 0.28 X 0.28 (mm).  
2KG028XXX CHIP TOPOGRAPHY  
2KG028075YQ ELECTRICAL CHARACTERISTICS (TJ=25°C)  
Characteristics Symbol Test Conditions  
Forward Voltage  
Min.  
••  
Typ. Max. Unit  
I =10mA.  
••  
1.0  
1.2  
V
V
V
F
V
F
I =100mA.  
F
0.62  
100  
0.9  
Reverse voltage  
Reverse Current  
Diode Capacitance  
V
I =100mA.  
120 ••  
BR  
B
V =20V.  
R
••  
••  
••  
••  
••  
25  
5
nA  
mA  
pF  
I
R
V =75V.  
R
C
f=1MHz; V =0.  
1.9  
4
d
R
When switched from I =10mA to  
F
Reverse Recovery Time  
t
V =6V; R =100W; measured at  
••  
••  
4
ns  
rr  
R
L
I =1mA.  
R
2KG028075YQ APPEARANCE(Top side material is Ag ball)  
Chip Appearance Diagram  
Parameter  
Chip Size  
Symbol  
Min.  
240  
100  
190  
60  
Type  
••  
Max.  
Unit  
D
C
A
B
/
260  
140  
225  
90  
mm  
mm  
mm  
mm  
mm  
Chip Thickness  
Bump Diameter  
Bump Height  
••  
••  
80  
40  
Scribe Line Width  
••  
••  
HANGZHOU SILAN MICROELECTRONICS CO.,LTD  
Http: www.silan.com.cn  
REV:1.0  
2004.10.26  
Page 1 of 1  

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