Datasheet > 2KG026075YQ

2KG026075YQ

更新时间： 2024-11-07 06:23:31

品牌	Logo	应用领域
士兰微 - SILAN		二极管开关
页数	文件大小	规格书
1页	45K
描述
SWITCHING DIODE CHIPS

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2KG026075YQ 数据手册

2KG026075YQ

2KG026075YQ SWITCHING DIODE CHIPS

DESCRIPTION

2KG026075YQ is

high speed switching diode chip

fabricated in planar technology.

This chip can be encapsulated as 1N4148 switching diode.

When the chip is selected glass package, the chip thickness

is 100mm, and the top electrodes material is Ag bum, pthe

back•side electrodes material is Ag.

Chip size: 0.26 X 0.26 (m²m. )

2KG026XXX CHIP TOPOGRAPHY

2KG026075YQ ELECTRICAL CHARACTERISTICS (TJ=25°C)

Characteristics Symbol Test Conditions

Forward Voltage

Min.

••

Typ. Max. Unit

I =10mA.

••

1.0

1.2

••

I =100mA.

0.62

100

0.9

120

Reverse Voltage

Reverse Current

Diode Capacitance

I =100mA.

V =20V.

••

V =75V.

f=1MHz; V =0.

1.9

When switched from I =10mA to

Reverse Recovery Time

V =6V; R =100W; measured at

••

I =1mA.

2KG026075YQ APPEARANCE˄Top side material is Ag ball˅

Chip Appearance Diagram

Parameter

Chip Size

Symbol

Min.

220

Type

••

Max.

Unit

240

120

160

Chip Thickness

Bump Diameter

Bump Height

••

135

••

Scribe Line Width

••

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http: www.silan.com.cn

REV:1.0

2006.04.25

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