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2KG026075YQ PDF预览

2KG026075YQ

更新时间: 2024-11-20 06:23:31
品牌 Logo 应用领域
士兰微 - SILAN 二极管开关
页数 文件大小 规格书
1页 45K
描述
SWITCHING DIODE CHIPS

2KG026075YQ 数据手册

  
2KG026075YQ  
2KG026075YQ SWITCHING DIODE CHIPS  
DESCRIPTION  
Ø
2KG026075YQ is  
a
high speed switching diode
fabricated in planar technology.  
Ø
Ø
This chip can be encapsulated as 1N4148 switching diode.  
When the chip is selected glass package, the chip thickness  
is 100mm, and the top electrodes material is Ag bum, pthe  
back•side electrodes material is Ag.  
Ø
Chip size: 0.26 X 0.26 (m2m. )  
2KG026XXX CHIP TOPOGRAPHY  
2KG026075YQ ELECTRICAL CHARACTERISTICS (TJ=25°C)  
Characteristics Symbol Test Conditions  
Forward Voltage  
Min.  
••  
Typ. Max. Unit  
I =10mA.  
••  
1.0  
1.2  
••  
V
V
V
F
V
F
I =100mA.  
F
0.62  
100  
0.9  
120  
Reverse Voltage  
Reverse Current  
Diode Capacitance  
V
I =100mA.  
B
BR  
V =20V.  
R
••  
••  
••  
••  
••  
25  
5
nA  
mA  
pF  
I
R
V =75V.  
R
C
f=1MHz; V =0.  
1.9  
4
d
R
When switched from I =10mA to  
F
Reverse Recovery Time  
t
V =6V; R =100W; measured at  
••  
••  
4
ns  
rr  
R
L
I =1mA.  
R
2KG026075YQ APPEARANCE˄Top side material is Ag ball˅  
Chip Appearance Diagram  
Parameter  
Chip Size  
Symbol  
Min.  
220  
85  
Type  
••  
Max.  
Unit  
D
C
A
B
/
240  
120  
160  
40  
mm  
mm  
mm  
mm  
mm  
Chip Thickness  
Bump Diameter  
Bump Height  
••  
135  
20  
••  
••  
Scribe Line Width  
••  
40  
••  
HANGZHOU SILAN MICROELECTRONICS CO.,LTD  
Http: www.silan.com.cn  
REV:1.0  
2006.04.25  
Page 1 of 1  

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