Datasheet > 2KG023075JL

2KG023075JL

更新时间： 2024-11-18 06:22:35

品牌	Logo	应用领域
士兰微 - SILAN		二极管开关
页数	文件大小	规格书
1页	37K
描述
SWITCHING DIODE CHIPS

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2KG023075JL 数据手册

2KG023075JL

2KG023075JL SWITCHING DIODE CHIPS

DESCRIPTION

2KG023075JL

high

speed

switching

diode

chip

fabricated in planar technology.

This chip can be encapsulated as 1N4148 switching diode.

This chip has several thickn,essceasn suit for differe

plastic package. The top electrodes material is Al, and th

back•side electrodes material is Au.

Chip size: 0.23 X 0.23 (m²m)

2KG023XXX CHIP TOPOGRAPHY

2KG023075JL ELECTRICAL CHARACTERISTICS (TJ=25°C)

Characteristics

Forward Voltage

Symbol

Test Conditions

I =10mA.

Min.

••

Typ. Max. Unit

••

1.0

1.2

I =100mA.

0.62

100

0.9

Reverse Voltage

Reverse Current

Diode Capacitance

I =100mA.

120 ••

V =20V.

••

V =75V.

f=1MHz; V =0.

1.9

When switched from I =10mA to

Reverse Recovery Time

••

V =6V; R =100W; measured at

R L

I =1mA.

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http: www.silan.com.cn

REV:1.0

2006.04.25

Page 1 of 1

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