Datasheet > 2KC1101

2KC1101

更新时间： 2024-11-27 18:09:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	181K
描述
NPN Silicon RF Transistor

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中文翻译

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数据手册

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2KC1101 数据手册

SMD Type

Transistors

NPN Transistors

2KC1101

627ꢅꢆꢉ

8QLWꢌ PP

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢆꢁꢇ

ꢀꢁꢂ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

Features

Low noise and high gain.

NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

High power gain.

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢃꢀꢁꢀꢈ

ꢅꢀꢁꢀꢄ

ꢀꢁꢇꢈ

ꢀꢁꢄ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢄꢁꢇ

MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

ꢄꢁ%DVH

ꢆꢁ(PLWWHU

ꢉꢁFROOHFWRU

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Total power dissipation

Junction temperature

3.0

100

Ptot

200

150

Storage temperature range

Tstg

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

CBO

Ic= 100 ȝAˈ I

Ic= 1 mAˈ I = 0

= 100 uAˈ I

E= 0

CEO

EBO

C= 0

CBO

EBO

CB= 10 V , I

^EB= 3V , I

= 0

Collector-emitter saturation voltage *

Base - emitter saturation voltage *

CE(sat)

BE(sat)

=50 mA, I

^CE= 10V, I

=5mA

0.4

1.2

250

B=5mA

DC current gain

= 20mA

125

Insertion power gain

Noise figure

|S21e | ²

CE = 10 V, I

= 20 mA, f= 1GHz

= 7 mA, f= 1GHz

11.5

1.1

0.55

Reverse transfer capacitance

Transition frequency

Cre

CB= 10V, I

^CE= 10V, I

= 0,f=1MHz

= 20mA

GHz

*. Pulse measurement: PW

350 s, Duty Cycle

2%.

Marking

ꢀR01

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