Datasheet > 2KC1010

2KC1010

更新时间： 2024-11-24 18:09:59

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	207K
描述
Hign Voltage NPN Transistors

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中文翻译

获取价格

数据手册

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2KC1010 数据手册

SMD Type

Transistors

NPN Transistors

ꢀ,$ꢁꢂꢁꢂ

627ꢅꢆꢉ

8QLWꢌ PP

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢆꢁꢇ

ꢀꢁꢂ

Ƶ Features

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ƽ High breakdown voltage

ƽ Low collector-emitter saturation voltage

ƽ Complementary to ꢀ.$ꢀꢁꢂꢁ (PNP)

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢃꢀꢁꢀꢈ

ꢅꢀꢁꢀꢄ

ꢀꢁꢇꢈ

ꢀꢁꢄ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢄꢁꢇ

ꢄꢁ%DVH

ꢆꢁ(PLWWHU

ꢉꢁFROOHFWRU

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Collector - Base Voltage

Symbol

Rating

300

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

300

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance Junction to Ambient

Junction Temperature

500

350

șJA

357

ć/W

150

Storage Temperature Range

Tstg

-55 to 150

Ƶ Electrical Characteristics Ta = 25ć

Parameter

Symbol

Test Conditions

Ic= 100 ȝAˈ I = 0

Ic= 1 mAˈ I = 0

= 100 XAˈ I = 0

CB= 200 V , I = 0

EB= 5V , I =0

Min

300

Typ

Max

Unit

Collector-base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

CBO

CEO

EBO

CBO

EBO

0.1

0.2

0.9

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

= 20 mA, I

= 2mA

C= 20mA, I

CE= 10V, I

CE= 20V, I

= 1mA

= 10mA

= 30mA

100

hfe˄1˅

hfe˄2˅

hfe˄3˅

DC current gain

300

Transition frequency

= 10mA, f=30MHz

MHz

Ƶ Marking

Marking

ꢀ%

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