Datasheet > 2KC1009

2KC1009

更新时间： 2024-11-24 18:10:03

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科信 - KEXIN		/
页数	文件大小	规格书
2页	187K
描述
Hign Voltage NPN Transistors

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中文翻译

获取价格

数据手册

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2KC1009 数据手册

SMD Type

Transistors

NPN Transistorsꢀ

ꢁ,$ꢂꢃꢃꢄ

627ꢅꢆꢉ

8QLWꢌ PP

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢆꢁꢇ

ꢀꢁꢂ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

Ƶ Features

ƽ High Collector-Emitter Voltage

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢃꢀꢁꢀꢈ

ꢅꢀꢁꢀꢄ

ꢀꢁꢇꢈ

ꢀꢁꢄ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢄꢁꢇ

ꢄꢁ%DVH

ꢆꢁ(PLWWHU

ꢉꢁFROOHFWRU

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Symbol

Rating

400

Unit

Collector - Base Voltage

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

400

Collector Current - Continuous

Collector Current -Pulsed

200

300

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

350

șJA

357

ć/W

150

Storage Temperature Range

stg

-55 to 150

Ƶ Electrical Characteristics Ta = 25ć

Parameter

Symbol

Test Conditions

Ic= 100 ȝAˈ I = 0

Ic= 1 mAˈ I = 0

= 100Aˈ I = 0

CB= 400 V , I = 0

EB= 4V , I =0

Min

400

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage *1

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

100

0.2

CE(sat)1

CE(sat)2

=10 mA, I

=50 mA, I

=10 mA, I

CE= 10V, I

^CB= 20V, I

=1mA

=5mA

=1mA

Collector-emitter saturation voltage *1

Base - emitter saturation voltage *1

0.3

BE(sat)

0.75

FE(1)

FE(2)

FE(3)

FE(4)

= 1mA

= 10mA

= 50mA

= 100mA

300

DC current gain *1

Collector output capacitance

Transition frequency

= 0,f=1MHz

VCE=20, I

C= 10mA,f=30MHz

MHz

*1: Pulse test: pulse width İ300ȝs, duty cycleİ 2.0%.

Ƶ Marking

Marking

ꢀ%

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