Datasheet > 2KC1008

2KC1008

更新时间： 2024-10-15 18:09:35

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	146K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2KC1008 数据手册

SMD Type

Transistors

NPN Transistors

ꢀ,$ꢁꢂꢂꢃ

627ꢅꢆꢉ

8QLWꢌꢍPP

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢆꢁꢇ

ꢀꢁꢂ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

Ƶ Features

Ideal for Medium Power Amplification and Switching

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢃꢀꢁꢀꢈ

ꢀꢁꢄ

ꢅꢀꢁꢀꢄ

ꢀꢁꢇꢈ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢄꢁꢇ

ꢄꢁ%DVH

ꢆꢁ(PLWWHU

ꢉꢁFROOHFWRU

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

6.0

Collector current

600

ć/W

Total Device Dissipation Alumina Substrate

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

P^D

300

R^ș-$

T^J, Tstg

417

-55 to150

Ƶ Electrical Characteristics Ta = 25ć

Parameter

Symbol

Test conditions

Min

Typ Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V^(BR)CBOICꢀ ꢀꢃꢂꢂȝ$ꢄ IE = 0

V^(BR)CEOIC = 1.0 mA, IB = 0

V^(BR)EBOIEꢀ ꢃꢂꢂȝ$ꢄꢀIC = 0

6.0

I^CBO

I^EBO

VCB=50 V, IE=0

VEB=5V, IC=0

0.1

ȝ$

Emitter cut-off current

IC = 0.1 mA, VCE = 1.0 V

I^C= 1.0 mA, VCE = 1.0 V

I^C= 10 mA, VCE = 1.0 V

I^C= 150 mA, VCE = 1.0 V

I^C= 500 mA, VCE = 2.0 V

100

DC current gain *

h^FE

300

I^C= 150 mA, IB = 15 mA

I^C= 500 mA, IB = 50 mA

I^C= 150 mA, IB = 15 mA

I^C= 500 mA, IB = 50 mA

IC = 20 mA, VCE = 10 V, f = 100 MHz

VCC = 30 V, VEB = 2.0 V,

IC = 150 mA, IB1 = 15 mA

VCC = 30 V, IC = 150 mA,

IB1 = IB2 = 15 mA

0.4

0.75

0.95

1.2

Collector-emitter saturation voltage

Base-emitter saturation voltage *

V^CE(sat)

V^BE(sat)

0.75

250

Transition frequency

Delay time

f^T

t^d

t^r

MHz

Rise time

Storage time

Fall time

t^s

t^f

225

* Pulse test: pulse width İꢀꢁꢂꢂꢀȝV, duty cycle İ 2.0%.

Ƶ Marking

Marking

ꢀ%

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