Datasheet > 2KC1006

2KC1006

更新时间： 2024-11-24 18:09:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	120K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2KC1006 数据手册

6S0M'DꢀT7\ySpHe

Transistors

NPN Transistorsꢀ

ꢁ,$ꢂꢃꢃꢄꢀ

627ꢅꢆꢉ

8QLWꢌ PP

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢆꢁꢇ

ꢀꢁꢂ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

Ƶ Features

Collector Current: IC=0.8A

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢃꢀꢁꢀꢈ

ꢅꢀꢁꢀꢄ

ꢀꢁꢇꢈ

ꢀꢁꢄ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢄꢁꢇ

ꢄꢁ%DVH

ꢆꢁ(PLWWHU

ꢉꢁFROOHFWRU

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Collector-Base Voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

0.8

P^C

0.3

Junction Temperature

Storage Temperature

150

℃

T^stg

-55 to 150

Ƶ Electrical Characteristics Ta = 25ć

Parameter

Symbol

Test conditions

Min

Typ Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base Breakdown voltage

Collector-base cut-off current

Collector-emitter cut-off current

V^CBO

V^CEO

V^EBO

I^CBO

IC = 100 u A , IE = 0

IC = 1 mA , IB = 0

IE = 100 u A , IC = 0

VCB = 35V , IE = 0

0.1

I^CEO

VCE = 20 V , IB = 0

V^CE= 1 V , IC = 1 mA

V^CE= 1 V , IC = 100 mA

V^CE= 1 V , IC = 800 mA

ꢀ00

DC current gain

hFE

ꢁꢂ0

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V^CE(sat)IC = 800 mA , IB = 80 mA

V^BE(sat)IC = 800 mA , IB = 80 mA

0.5

1.2

f^T

300 u s , duty cycle 2%.

VCE = 6 V , IC = 20 mA , f = 30 MHz

150

MHz

* Pulse Test : pulse width

Ƶ Marking

Marking

ꢃ%

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中文翻译

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