Datasheet > 2KC1004

2KC1004

更新时间： 2024-10-15 18:09:23

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	253K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2KC1004 数据手册

SMD Type

Transistors

NPN Transistors

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627ꢅꢆꢉ

8QLWꢌ PP

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢆꢁꢇ

ꢀꢁꢂ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

Features

High DC Current Gain:

h^FE= 200 TYP.

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢃꢀꢁꢀꢈ

ꢅꢀꢁꢀꢄ

ꢀꢁꢇꢈ

V^CE= 6.0 V, IC = 1.0 mA

High Voltage:

ꢀꢁꢄ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢄꢁꢇ

V^{CE O}= 50 V

ꢄꢁ%DVH

ꢆꢁ(PLWWHU

ꢉꢁFROOHFWRU

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Symbol

V^CBO

VCEO

V^EBO

I^C

Rating

Unit

100

Collector power dissipation

Junction temperature

200

150

Storage temperature range

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

CBO

Ic= 100 ȝAˈ I

Ic= 1 mAˈ I = 0

= 100Aˈ I

E= 0

CEO

EBO

C= 0

CBO

EBO

CB= 60 V , I

EB= 5V , I

= 0

100

0.3

Collector-emitter saturation voltage *

Base - emitter saturation voltage *

Base - emitter voltage *

CE(sat)

BE(sat)

=100 mA, I

=10mA

0.15

0.86

=100 mA, I

CE= 6V, I

CB= 6V, I

^CE= 6V, I

= 1mA

0.55

0.7

ꢂ00

DC current gain *

hFE

ꢀꢁꢁ

Collector output capacitance

Transition frequency

= 0,f=1MHz

= -10mA

250

MHz

*. PW 350 us,duty cycle 2%

Ƶ Marking

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