Datasheet > 2KC1002

2KC1002

更新时间： 2024-11-27 18:09:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	149K
描述
NPN Transistors

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中文翻译

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数据手册

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2KC1002 数据手册

s st s

NPN Transistorsꢀ

ꢁ,$ꢂꢃꢃꢁ

627ꢅꢆꢉ

8QLWꢌ PP

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢆꢁꢇ

ꢀꢁꢂ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢃꢀꢁꢀꢈ

ꢅꢀꢁꢀꢄ

ꢀꢁꢇꢈ

ꢀꢁꢄ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢄꢁꢇ

ꢄꢁ%DVH

ꢆꢁ(PLWWHU

ꢉꢁFROOHFWRU

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Collector - Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Power Dissipation

600

ć/W

P^D

250

Thermal resistance from junction to ambient

Junction Temperature

R^șJA

T^J

417

150

Storage Temperature Range

T^stg

-55 to 150

Ƶ Electrical Characteristics Ta = 25ć

Parameter

Symbol

Test conditions

Min

Typ Max

Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector cutoff current

V^(BR)CBOICꢀ ꢀꢁꢂꢂꢀȝA, IE = 0

V^(BR)CEOIC = 10 mA, IB = 0

V^(BR)EBOIEꢀ ꢀꢁꢂꢂꢀȝ A, IC = 0

I^CBO

I^CEX

I^EBO

VCB=60V, IE=0

100

Collector cut-off current

VCE=30V,VEB(off)=-3V

VEB= 3V, IC=0

Emitter cutoff current

100

V^CE=10V, IC= 0.1mA

V^CE=10V, IC= 150mA

V^CE=10V, IC= 500mA

100

DC current gain

h^FE

300

0.3

I^C= 150 mA; IB = 15 mA

collector-emitter saturation voltage *

base-emitter saturation voltage *

V^CE(sat)

I^C= 500 mA; IB = 50 mA

0.6

1.2

I^C= 150 mA; IB = 15 mA

VBE(sat)

I^C= 500 mA; IB = 50 mA

Transition frequency

Delay time

f^T

t^d

t^r

300

MHz

IC = 20 mA; VCE = 20 V; f = 100 MHz

V^CC=30V, VBE(off)=-0.5V,

I^C=150mA , IB1= 15mA

Rise time

Storage time

Fall time

t^s

t^f

225

V^CC=30V, IC=150mA,IB1=-IB2=15mA

* pulse test: Pulse Width İꢃꢂꢂȝVꢄꢀDuty Cycleİ 2.0%.

Ƶ Mrarking

Marking

ꢀ$

中文翻译

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