SMD Type
Transistors
PNP Transistors
2.%ꢀꢁꢁꢂ
1.70 0.1
Features
LowꢀSaturationꢀVoltage:ꢀVCE(sat)ꢀ=ꢀ-0.5Vꢀ(max)ꢀ(ICꢀ=ꢀ-1A)ꢀ
HighꢀSpeedꢀSwitchingꢀTime:ꢀtstgꢀ=ꢀ1.0usꢀ(typ.)
SmallꢀFlatꢀPackage
0.42 0.1
0.46 0.1
PCꢀ=ꢀ1ꢀtoꢀ2Wꢀ(mountedꢀonꢀceramicꢀsubstrate)ꢀ
1.Base
2.Collector
3.Emitter
AbsoluteꢀMaximumꢀRatingsꢀTaꢀ=ꢀ25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
-50
-50
V
-5
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
-2
A
mW
ć
I
B
-0.4
P
C
500
T
J
150
Storage Temperature range
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Ic= -100 ȝAˈ I =0
Ic= -10 mAˈ I =0
= -100Aˈ I =0
CB= -50 V , I =0
EB= -5V , I =0
Min
-50
-50
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
I
CBO
EBO
V
V
E
-100
-100
-0.5
-1.2
240
nA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=-1 A, I
B
B
=- 50mA
=- 50mA
V
C=-1 A, I
h
FE(1)
FE(2)
V
V
CE= -2V, I
C
= -0.5A
ꢀꢁ0
DC current gain
h
CE= -2 V, I
C
= -2A
20
Turn-on time
t
on
0.1
1
See Test Circuit.
us
Storage time
t
stg
Fall time
t
f
0.1
40
Collector output capacitance
Transition frequency
Cob
T
V
V
CB= -10V, I
E
= 0
pF
,f=1MHz
f
CE= -2V, I = -0.5A
C
120
MHz
0DUNLQJ
0DUNLQJ
ꢀꢁ.ꢂꢂ
1
www.kexin.com.cn