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2KB4008 PDF预览

2KB4008

更新时间: 2024-11-19 18:10:07
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3页 602K
描述
PNP Transistors

2KB4008 数据手册

 浏览型号2KB4008的Datasheet PDF文件第2页浏览型号2KB4008的Datasheet PDF文件第3页 
SMD Type  
Transistors  
PNP Transistors  
2.%ꢀꢁꢁꢂ  
1.70 0.1  
Features  
LowSaturationVoltage:VCE(sat)=-0.5V(max)(IC=-1A)ꢀ  
HighSpeedSwitchingTime:tstg=1.0us(typ.)  
SmallFlatPackage  
0.42 0.1  
0.46 0.1  
PC=1to2W(mountedonceramicsubstrate)ꢀ  
1.Base  
2.Collector  
3.Emitter  
AbsoluteMaximumRatingsTa=25  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
-50  
-50  
V
-5  
Collector Current - Continuous  
Base Current - Continuous  
Collector Power Dissipation  
Junction Temperature  
I
C
-2  
A
mW  
ć
I
B
-0.4  
P
C
500  
T
J
150  
Storage Temperature range  
Tstg  
-55 to 150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Test Conditions  
Ic= -100 ȝAˈ I =0  
Ic= -10 mAˈ I =0  
= -100­Aˈ I =0  
CB= -50 V , I =0  
EB= -5V , I =0  
Min  
-50  
-50  
-5  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
E
B
I
E
C
I
CBO  
EBO  
V
V
E
-100  
-100  
-0.5  
-1.2  
240  
nA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=-1 A, I  
B
B
=- 50mA  
=- 50mA  
V
C=-1 A, I  
h
FE(1)  
FE(2)  
V
V
CE= -2V, I  
C
= -0.5A  
ꢀꢁ0  
DC current gain  
h
CE= -2 V, I  
C
= -2A  
20  
Turn-on time  
t
on  
0.1  
1
See Test Circuit.  
us  
Storage time  
t
stg  
Fall time  
t
f
0.1  
40  
Collector output capacitance  
Transition frequency  
Cob  
T
V
V
CB= -10V, I  
E
= 0  
pF  
,f=1MHz  
f
CE= -2V, I = -0.5A  
C
120  
MHz  
0DUNLQJ  
0DUNLQJ  
ꢀꢁ.ꢂ  
1
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1.9A single phase rectifier bridge