Datasheet > 2KB4007

2KB4007

更新时间： 2024-10-15 18:09:27

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	533K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2KB4007 数据手册

SMD Type

Transistors

PNPꢃTr

ansistors

2.%ꢀꢁꢁꢂ

Features

1.70 0.1

High collector to emitter voltage: VCEO -120V.

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

-120

-5

Collector current

-0.7

Collector current (pulse) *1

Collector power dissipation

Junction temperature

I^C(pu)

P^c

-1.2

T^j

150

Storage temperature

T^stg

-55 to +150

*1. PW 10ms,duty cycle 50%

Ƶ Electrical Characteristics Ta = 25ć

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

ICBO

Testconditions

Min

Typ

Max

-100

ꢃꢄꢅ

Unit

VCB = -120V, IE=0

IEBO

VEB = -5V, IC=0

VCE =-1V , IC = -100mA

VCE =-1V , IC = -5.0mA

ꢀꢁꢂ

DC current gain *

hFE

200

-0.4

-0.9

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter voltage *

VCE(sat) IC = -500mA , IB = -50mA

VBE(sat) IC = -500mA , IB = -50mA

-0.6

-1.5

VBE

Cob

VCE =-10V , IC = -10mA

-550 -620 -650

Output capacitance

VCB = -10V , IE = 0 , f = 1.0MHz

VCE = -10V , IE = 10mA

Transition frequency

MHz

* PW 350μs,duty cycle 2%

0DUNLQJ

ꢀꢁ.ꢁꢂ

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中文翻译

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