Datasheet > 2KB4004-R

2KB4004-R

更新时间： 2024-11-21 01:10:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1701K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2KB4004-R 数据手册

SMD Type

Transistors

PNP Transistors

2KB4004

Features

1.70 0.1

Low VCE(sat)

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

Rating

Unit

-40

V^CEO

-32

V^EBO

-5

Collector Current

(DC)

-1

-2

I^C

Single pulse, P^W=100ms

Collector Power Dissipation

P^C*

T^j

0.5

Jumction temperature

150

Storage temperature Range

Tstg

-55 to +150

* When mounted on a 40x40x0.7mm ceramic board.

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-40

-32

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

V^CEO

V^EBO

I^CBO

Ic= -50μA， IE=0

Ic= -1 mA， IB=0

IE= -50μA， IC=0

VCB= -20 V , IE=0

VEB= -4V , IC=0

-0.5

390

IEBO

Collector-emitter saturation voltage

DC current gain

V^CE(sat)I^C=-500 mA, I^B=-50mA

-0.2

h^FE

C^ob

f^T

VCE= -3V, IC= -0.1A

Collector output capacitance

Transition frequency

VCB= -10V, IE= 0mA,f=1MHz

VCE= -5V, IE= 50mA,f=30MHz

150

MHz

hFE Classification

Type

Range

Marking

2KB4004-P

82-180

2KB4004-Q

120-270

BAQ*

2KB4004-R

180-390

BAR*

BAP*

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