SMD Type
Transistors
PNP Transistors
2KB4004
Features
1.70 0.1
Low VCE(sat)
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
Rating
Unit
-40
V
V
VCEO
-32
VEBO
-5
V
Collector Current
(DC)
-1
-2
A
IC
Single pulse, PW=100ms
A
Collector Power Dissipation
PC *
Tj
0.5
W
Jumction temperature
150
Storage temperature Range
Tstg
-55 to +150
* When mounted on a 40x40x0.7mm ceramic board.
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-40
-32
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
ICBO
Ic= -50μA, IE=0
Ic= -1 mA, IB=0
IE= -50μA, IC=0
VCB= -20 V , IE=0
VEB= -4V , IC=0
-0.5
-0.5
-0.5
390
30
uA
V
IEBO
Collector-emitter saturation voltage
DC current gain
VCE(sat) IC=-500 mA, IB=-50mA
-0.2
hFE
Cob
fT
VCE= -3V, IC= -0.1A
82
Collector output capacitance
Transition frequency
VCB= -10V, IE= 0mA,f=1MHz
VCE= -5V, IE= 50mA,f=30MHz
20
pF
150
MHz
hFE Classification
Type
Range
Marking
2KB4004-P
82-180
2KB4004-Q
120-270
BAQ*
2KB4004-R
180-390
BAR*
BAP*
1
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