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2KB4004-P PDF预览

2KB4004-P

更新时间: 2024-11-19 01:10:39
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
3页 1701K
描述
PNP Transistors

2KB4004-P 数据手册

 浏览型号2KB4004-P的Datasheet PDF文件第2页浏览型号2KB4004-P的Datasheet PDF文件第3页 
SMD Type  
Transistors  
PNP Transistors  
2KB4004  
Features  
1.70 0.1  
Low VCE(sat)  
0.42 0.1  
0.46 0.1  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
Rating  
Unit  
-40  
V
V
VCEO  
-32  
VEBO  
-5  
V
Collector Current  
(DC)  
-1  
-2  
A
IC  
Single pulse, PW=100ms  
A
Collector Power Dissipation  
PC *  
Tj  
0.5  
W
Jumction temperature  
150  
Storage temperature Range  
Tstg  
-55 to +150  
* When mounted on a 40x40x0.7mm ceramic board.  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
-40  
-32  
-5  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
ICBO  
Ic= -50μAIE=0  
Ic= -1 mAIB=0  
IE= -50μAIC=0  
VCB= -20 V , IE=0  
VEB= -4V , IC=0  
-0.5  
-0.5  
-0.5  
390  
30  
uA  
V
IEBO  
Collector-emitter saturation voltage  
DC current gain  
VCE(sat) IC=-500 mA, IB=-50mA  
-0.2  
hFE  
Cob  
fT  
VCE= -3V, IC= -0.1A  
82  
Collector output capacitance  
Transition frequency  
VCB= -10V, IE= 0mA,f=1MHz  
VCE= -5V, IE= 50mA,f=30MHz  
20  
pF  
150  
MHz  
hFE Classification  
Type  
Range  
Marking  
2KB4004-P  
82-180  
2KB4004-Q  
120-270  
BAQ*  
2KB4004-R  
180-390  
BAR*  
BAP*  
1
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