Datasheet > 2KA7032DV

2KA7032DV

更新时间： 2024-10-15 18:10:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	220K
描述
PNP/PNP Transistors

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中文翻译

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数据手册

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2KA7032DV 数据手册

SMD Type

Transistors

PNP/PNP Transistor

2KA7032DV

(

)

Unit: mm

SOT-23-6

Ƶ Features

+0.1

-0.1

0.4

ƽ Low collector-emitter saturation voltage VCEsat

ƽ High collector current capability I and ICM

ƽ High collector current gain (hFE) at high I

ƽ High efficiency leading to reduced heat generation

ƽ Reduced printed-circuit board area requirements.

+0.02

0.15

-0.02

+0.01

-0.01

Ƶ Pinning information

+0.2

-0.1

1, 4

2, 5

6, 3

emitterTR1; TR2

baseTR1; TR2

TR2

collectorTR1; TR2

TR1

Ƶ Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current

CBO

CEO

EBO

-80

-60

-5

-0.77

-0.9

-1

Peak Collector Current (single peak)

Base Current

-2

-0.3

-1

Peak Base Current

IBM

Total Power Dissipation˄Ta=25ć˅

290

370

450

420

560

700

431

338

278

150

tot

Per Devices Total Power Dissipation˄Ta=25ć˅

Thermal Resistance from Junction to Ambient

Rth(j-a)

ć/W

Junction Temperature

Storage Temperature range

Note:

Tstg

-55 to +150

1. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

3. Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

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