Datasheet > 2KA2010

2KA2010

更新时间： 2024-11-21 18:09:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	213K
描述
Hign Voltage PNP Transistors

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中文翻译

获取价格

数据手册

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2KA2010 数据手册

SMD Type

Transistors

PNPꢀTransistors

ꢁ,"ꢁꢂꢃꢂ

627ꢅꢆꢉ

8QLWꢌ PP

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢆꢁꢇ

ꢀꢁꢂ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

Ƶ Features

ƽ High voltage transistor

ƽ Low collector-emitter saturation voltage

ƽ Complementary to ꢀ.&ꢀꢁꢂꢁ (NPN)

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢃꢀꢁꢀꢈ

ꢅꢀꢁꢀꢄ

ꢀꢁꢇꢈ

ꢀꢁꢄ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢄꢁꢇ

ꢄꢁ%DVH

ꢆꢁ(PLWWHU

ꢉꢁFROOHFWRU

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Collector - Base Voltage

Symbol

Rating

-300

-5

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance Junction to Ambient

Junction Temperature

-500

350

ć/W

șJA

417

150

Storage Temperature range

Tstg

-55 to 150

Ƶ Electrical Characteristics Ta = 25ć

Parameter

Symbol

Test Conditions

Ic= -100 ȝAˈ I =0

Ic= -1 mAˈ I =0

= -100Aˈ I =0

CB= -200 V , I =0

EB= -5V , I =0

Min

-300

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

-0.25

-0.1

-0.2

-0.9

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-20 mA, I

=- 2mA

= -2mA

C= -20mA, I

CE= -10V, I

CE= -20V, I

= -1mA

= -10mA

=-30mA

100

hfe˄1˅

hfe˄2˅

hfe˄3˅

DC current gain

300

Transition frequency

= -10mA,f=30MHz

MHz

Ƶ Marking

Marking

ꢃ&

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