Datasheet > 2KA2004

2KA2004

更新时间： 2024-10-15 18:09:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	153K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2KA2004 数据手册

SMD Type

Transistors

PNPꢀTransistors

ꢁ,"ꢁꢂꢂꢃ

627ꢅꢆꢉ

8QLWꢌ PP

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢆꢁꢇ

ꢀꢁꢂ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

Features

High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA)

High Voltage: VCEO = -50 V

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢃꢀꢁꢀꢈ

ꢅꢀꢁꢀꢄ

ꢀꢁꢇꢈ

ꢀꢁꢄ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢄꢁꢇ

ꢄꢁ%DVH

ꢆꢁ(PLWWHU

ꢉꢁFROOHFWRU

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Symbol

VCBO

VCEO

VEBO

Rating

-60

Unit

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

power dissipation

-50

-5.0

-100

200

Junction temperature

Storage temperature range

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain *

Symbol

ICBO

Testconditions

Min

Typ

Max

-0.1

ꢂ00

Unit

VCB = -60 V, IE = 0 A

IEBO

VEB = -5.0 V, IC = 0 A

VCE = -6.0 V, IC = -1.0 mA

hFE

ꢀꢁ0

Collector saturation voltage

Base to emitter voltage

Output capacitance

VCE(sat) IC = -100 mA, IB = -10 mA

-0.18 -0.3

VBE

Cob

VCE = 6.0 V, IC = -1.0 mA

-0.58 -0.62 -0.68

VCE = -10 V, IE = 0 A, f = 1.0 MHz

VCE = -6.0 V, IE = 10 mA

4.5

Transition frequency

180

MHz

* Pulsed: PW

350 us, Duty Cycle

Ƶ 0DUNLQJ

0DUNLQJ

ꢃꢄ$

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中文翻译

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