Datasheet > 2KA2002

2KA2002

更新时间： 2024-11-24 18:09:27

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	171K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2KA2002 数据手册

s st s

PNP Transistors

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Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Collector - Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-60

Unit

Collector - Emitter Voltage

Emitter - Base Voltage

-60

-5

Collector Current - Continuous

Power Dissipation

600

ć/W

P^D

250

Thermal resistance from junction to ambient

Junction Temperature

R^șJA

T^J

500

150

Storage Temperature Range

Ƶ Electrical Characteristics Ta = 25ć

Parameter

T^stg

-55 to 150

Symbol

Test conditions

Min

-60

-5

Max

Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage*

Emitter-Base Breakdown Voltage

Collector Cutoff Current

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

I^CBO

IC = -100A, IE = 0

IC = -10 mA, IB = 0

IE = -100A, IC = 0

VCB = -50 V, IE = 0

-20

-50

Collector Cutoff Current

I^CEX

VCE = -30 V,VEB(off) =0.5V

V^CE=-10V,IC=-0.1mA

100

V^CE=-10V,IC=-1mA

DC Current Gain

h^FE

V^CE=-10V,IC=-10mA

V^CE=-10V,IC=-150mA

V^CE=-10V,IC=-500mA

I^C= -150 mA, IB = -15 mA

I^C= -500 mA, IB = -50 mA

I^C= -150 mA, IB = -15 mA

I^C= -500 mA, IB = -50 mA

VCE=-20V,IC=-50mA,f=100MHz

300

-0.4

-1.6

-1.3

-2.6

Collector-Emitter Saturation Voltage *

Base-Emitter Saturation Voltage *

V^CE(sat)

V^BE(sat)

Current Gain - Bandwidth Product

Delay Time

f^T

t^d

t^r

200

MHz

V^CC= -30 V, IC = -150 mA,IB1 = -15 mA

Rise Time

Storage Time

t^s

t^f

V^CC= -6.0 V, IC = -150 mA,IB1 = IB2 = -15

Fall Time

* Pulse test: Pulse width İꢀꢁꢂꢂꢀȝV, duty cycle İ 2.0%

Ƶ Marking

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中文翻译

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