5秒后页面跳转
2ED1324S12P PDF预览

2ED1324S12P

更新时间: 2023-12-06 20:03:23
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动双极性晶体管
页数 文件大小 规格书
34页 1096K
描述
EiceDRIVER? 1200 V half-bridge gate driver IC with 2.3 A source, 2.3 A sink current and cross conduction prevention in the sufficient creepage, clearance distance DSO-20 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1324S12P supports Active Miller Clamp (AMC), Short Circuit Clamp (SCC) and Cross conduction prevention for the best in class switching performance in the sufficient creepage/clearance distance package DSO-20. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. Since the device contains no parasitic thyristor structures, the design is very robust against parasitic?latch up?across the operating temperature and voltage range.

2ED1324S12P 数据手册

 浏览型号2ED1324S12P的Datasheet PDF文件第2页浏览型号2ED1324S12P的Datasheet PDF文件第3页浏览型号2ED1324S12P的Datasheet PDF文件第4页浏览型号2ED1324S12P的Datasheet PDF文件第5页浏览型号2ED1324S12P的Datasheet PDF文件第6页浏览型号2ED1324S12P的Datasheet PDF文件第7页 
2ED1324S12P/2ED1323S12P  
1200 V half-bridge gate driver with Active Miller Clamp and Short Circuit Clamp  
Features  
Product summary  
Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology  
VS_OFFSET = 1200 V (maximum)  
Io+ / Io- = 2.3 A / 2.3 A (peak)  
VCC = 13 V to 20 V (typical)  
Propagation delay = 500 ns typ.  
Dead-time = 380 ns typ.  
Floating channel designed for bootstrap operation  
Maximum bootstrap voltage (VB node) of + 1225 V  
Operating voltages (VS node) upto + 1200 V  
Negative VS transient voltage immunity of 100 V  
With repetitive 700 ns pulses  
2.3 A / 2.3 A peak output source / sink current capability  
Integrated ultra-fast over-current protection (OCP)  
± 5% high accuracy reference threshold  
Less than 1 us over-current sense to output shutdown  
Integrated Active Miller Clamp (AMC) with 2 A sink current capability  
Integrated Short Circuit Clamp (SCC) function  
Integrated ultra-fast, low resistance bootstrap diode  
Integrated dead-time and shoot-through prevention logic (2ED1324S12P)  
Enable, Fault, and programmable Fault clear RFE input  
Logic operational up to 8 V on VS Pin  
Independent per channel undervoltage lockout (UVLO)  
25 V VCC supply voltage (maximum)  
Separate Logic (VSS) and output ground (COM)  
Greater than 5 mm clearance / creepage  
Package  
2 kV HBM ESD capability  
PG-DSO-20-U03  
(20 fine-pitch leads)  
Typical applications  
Industrial Drives  
Embedded inverters for Motor Control in Pumps, Fans  
Commercial and Lite Commercial Air Conditioning  
Product validation  
Qualified for industrial applications according to the relevant tests of JEDEC78/20/22  
Ordering information  
Standard pack  
Sales Product Name Package type  
Orderable part number  
Form  
Tape and Reel  
Tape and Reel  
Quantity  
1,000  
2ED1324S12P  
2ED1323S12P  
PG-DSO-20-U03  
PG-DSO-20-U03  
2ED1324S12PXUMA1  
2ED1323S12PXUMA1  
1,000  
Datasheet  
www.infineon.com/soi  
Please read the Important Notice and Warnings at the end of this document  
Page 1 of 34  
V1.1  
2023-03-16  
 
 
 
 

与2ED1324S12P相关器件

型号 品牌 描述 获取价格 数据表
2ED2101S06F INFINEON 650 V high speed, high-side and low-side gate driver with typical 0.29 A source and 0.7 A

获取价格

2ED2103S06F INFINEON 650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink current

获取价格

2ED2104S06F INFINEON 650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink current

获取价格

2ED21064S06J INFINEON 650 V half bridge gate driver with integrated bootstrap diode

获取价格

2ED2106S06F INFINEON 650 V high-side and low-side gate driver with integrated bootstrap diode

获取价格

2ED21084S06J INFINEON 650 V high-side and low-side gate driver with integrated bootstrap diode

获取价格