生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-XUFM-X11 |
Reach Compliance Code: | unknown | 风险等级: | 5.83 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 200 A | 集电极-发射极最大电压: | 600 V |
配置: | COMPLEX | 最小直流电流增益 (hFE): | 80 |
JESD-30 代码: | R-XUFM-X11 | 元件数量: | 2 |
端子数量: | 11 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2DI200D-100 | FUJI |
获取价格 |
POWER TRANSISTOR MODULE | |
2DI200M-050 | ETC |
获取价格 |
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2DI200MA050 | FUJI |
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Transistor | |
2DI240A055 | ETC |
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TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 240A I(C) | |
2DI240A-055 | ETC |
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BIPOLAR TRANSISTOR MODULES Rating and Specifications | |
2DI300A-050 | ETC |
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BIPOLAR TRANSISTOR MODULES Rating and Specifications | |
2DI30A120 | ETC |
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TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 30A I(C) | |
2DI30A-120 | FUJI |
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Power Bipolar Transistor, 30A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy | |
2DI30A140 | ETC |
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TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.4KV V(BR)CEO | 30A I(C) | |
2DI30D050 | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 30A I(C) |