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2DA1213Y-13R PDF预览

2DA1213Y-13R

更新时间: 2024-11-08 13:00:31
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关
页数 文件大小 规格书
5页 127K
描述
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,

2DA1213Y-13R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:compliant
风险等级:5.73其他特性:HIGH RELIABILITY
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1 W参考标准:AEC-Q101
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):160 MHzBase Number Matches:1

2DA1213Y-13R 数据手册

 浏览型号2DA1213Y-13R的Datasheet PDF文件第2页浏览型号2DA1213Y-13R的Datasheet PDF文件第3页浏览型号2DA1213Y-13R的Datasheet PDF文件第4页浏览型号2DA1213Y-13R的Datasheet PDF文件第5页 
2DA1213O/Y  
PNP SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Epitaxial Planar Die Construction  
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.055 grams (approximate)  
3
2
1
E
C
B
COLLECTOR  
2,4  
C
4
1
BASE  
3
EMITTER  
Device Schematic  
TOP VIEW  
Pin Out Configuration  
Top View  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-50  
-50  
-5  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Continuous Collector Current  
Base Current  
-2  
A
-0.4  
A
IB  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
1
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
125  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C  
Operating and Storage Temperature Range  
JA  
-55 to +150  
TJ, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our  
website at http://www.diodes.com/datasheets/ap02001.pdf.  
1 of 5  
www.diodes.com  
January 2010  
© Diodes Incorporated  
2DA1213O/Y  
Document number: DS31306 Rev. 4 - 2  

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