Datasheet > 2CK120

2CK120

更新时间： 2024-10-13 22:11:35

品牌	Logo	应用领域
SSE		二极管开关局域网
页数	文件大小	规格书
1页	17K
描述
SILICON EPITAXIAL PLANAR SWITCHING DIODE

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数据手册

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2CK120 数据手册

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

2CK120

SILICON EPITAXIAL

PLANAR SWITCHING DIODE

TECHNICAL

SPECIFICATION

REVERSE VOLTAGE: 75V

FORWARD CURRENT: 150mA

FEATURES

• Small glass structure ensures high reliability

DO - 35

• Fast switching

• Low leakage

1.0 (25.4)

MIN.

• High temperature soldering guaranteed:

250^oC/10S/9.5mm lead length

.060 (1.5)

.090 (2.3)

DIA.

at 5 lbs tension

.120 (3.0)

.200 (5.1)

MECHANICAL DATA

• Terminal: Plated axial leads solderable per

1.0 (25.4)

MIN.

.018 (0.46)

.022 (0.56)

MIL-STD 202E, method 208C

• Case: Glass,hermetically sealed

• Polarity: Color band denotes cathode

• Mounting position: Any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND CHARACTERISTICS

(Ratings at 25^oC ambient temperature unless otherwise specified)

RATINGS

SYMBOL

VALUE

UNITS

V_R

V_RM

I_O

Reverse Voltage

Peak Reverse Voltage

100

Forward Current (average)

Repetitive Forward Peak Current

Forward Voltage (I_F=10mA)

Reverse Current (V_R=20V)

Reverse Current (V_R=75V)

150

I_FRM

V_F

400

I_R1

µA

Reverse Current (V_R=20V,T_J=100^oC)

I_R2

µA

Capacitance (note 1)

Reverse Charge (I_F=10mA)

^oC/mW

^oC

R_θ(ja)

Thermal Resistance (junction to ambient, note 2)

Operating Junction and Storage Temperature Range

0.35

_STG,T_J

-55 +175

Notes:

1. V_R=0V, f=1 MHz

2. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.

http://www.sse-diode.com

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