Datasheet > 2C3866A

2C3866A

更新时间： 2024-11-05 22:11:35

品牌	Logo	应用领域
SEMICOA		/
页数	文件大小	规格书
1页	34K
描述
Chip Type 2C3866A Geometry 1007 Polarity NPN

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中文翻译

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技术参数
数据手册

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2C3866A 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
配置：	Single	最小直流电流增益 (hFE)：	5
极性/信道类型：	NPN	子类别：	Other Transistors
Base Number Matches：	1

2C3866A 数据手册

Data Sheet No. 2C3866A

Ge ne ric Pa c ka ge d Pa rts :

2N3866, 2N3866A

Chip Type 2C3866A

Geometry 1007

Polarity NPN

Chip type 2C3866A by Semicoa

Semiconductors provides perfor-

mance similar to these devices.

Product Summary:

APPLICATIONS: Designed for amplifier,

frequency multiplier and oscillator applica-

tions. Suitable for output, driver and predriver

stages in VHF and UHF equipment.

Part Numbers:

2N3866A, 2N3866, 2N3866AUB, SD3866A,

SD3866AF, SQ3866A, SQ3866AF

Features: Special Characteristics:

ft = 950 MHz (type) at 50 mA/15V

Mechanical Specifications

Top

Al - 15 kÅ min.

Au - 6.5 kÅ nom.

3.4 mils x 3.0 mils

Metallization

Backside

Emitter

Base

Bonding Pad Size

8 mils nominal

Die Thickness

Chip Area

15 mils x 20 mils

Silox Passivated

Top Surface

Electrical Characteristics

T_A= 25^oC

Parameter

BV_CEO

Test conditions

Min

Max

---

Unit

V dc

µA

I_C= 5.0 mA

BV_CBO

BV_CER

BV_EBO

I_CEO

I_C= 100 µA

---

I_C= 5.0 mA, R_BE= 10 Ohms

I_E= 100 µA

---

3.5

---

V_CE= 28 V, V_EB= 2.0 V

I_C= 360 mA dc, V_CE= 5.0 V

I_C= 50 mA dc, V_CE= 5.0 V

h_FE1

5.0

---

h_FE2

200

---

Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less

than 300 µs, duty cycle less than 2%.

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