是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.88 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 400 V |
最大漏极电流 (ID): | 1 A | 最大漏源导通电阻: | 5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 10 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SK1600 | TOSHIBA |
功能相似 |
FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOS TYPE | |
2SK2603 | TOSHIBA |
功能相似 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER | |
2SK3472 | TOSHIBA |
功能相似 |
Switching Regulator Applications |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK945LBTE16L | TOSHIBA |
获取价格 |
TRANSISTOR 1 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Po | |
2SK945LBTE16R | TOSHIBA |
获取价格 |
TRANSISTOR 1 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Po | |
2SK945STA1 | TOSHIBA |
获取价格 |
TRANSISTOR 1 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERMOLD, DPAK-3, FET General | |
2SK945TE16L | TOSHIBA |
获取价格 |
TRANSISTOR 1 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK945TE16R | TOSHIBA |
获取价格 |
TRANSISTOR 1 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK947 | FUJI |
获取价格 |
N-CHANNLEL SILICON POWER MOSFET | |
2SK947M | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 12A I(D) | TO-220AB | |
2SK947MR | ETC |
获取价格 |
MOSFET | |
2SK947-MR | FUJI |
获取价格 |
N-CHANNLEL SILICON POWER MOSFET | |
2SK948 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 12A I(D) | TO-247 |